PART |
Description |
Maker |
CY7C1302CV25-167 CY7C1302CV25 CY7C1302CV25-133 CY7 |
9-Mbit Burst of Two Pipelined SRAMs with QDR(TM) Architecture 9-Mbit Burst of Two Pipelined SRAMs with QDR⑩ Architecture 9-Mbit Burst of Two Pipelined SRAMs with QDR Architecture
|
CYPRESS[Cypress Semiconductor]
|
CY7C1305AV25 CY7C1305AV25-133BZC CY7C1305AV25-167 |
18-Mbit Burst of 4 Pipelined SRAM with QD(TM) Architecture 18-MBIT BURST OF 4 PIPELINED SRAM WITH QDR ARCHITECTURE
|
CYPRESS[Cypress Semiconductor]
|
CY7C1305BV18-100BZC CY7C1305BV18-133BZC CY7C1305BV |
18-Mbit Burst of 4 Pipelined SRAM with QD(TM)Architecture 18-Mbit Burst of 4 Pipelined SRAM with QDR⑩ Architecture
|
Cypress Semiconductor
|
CY7C1303BV25-100BZXC CY7C1306BV25-100BZXC |
18-Mbit Burst of 2 Pipelined SRAM with QD(TM) Architecture
|
Cypress
|
CY7C1305BV25-167BZI CY7C1305BV25-167BZXC CY7C1305B |
18-Mbit Burst of 4 Pipelined SRAM with QDR⑩ Architecture
|
Cypress Semiconductor
|
CY7C1305BV25-133BZC CY7C1307BV25-133BZC CY7C1307BV |
18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture
|
Cypress Semiconductor Corp.
|
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT http:// Integrated Device Technology, Inc.
|
BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BB |
3.3V, 20W DC-DC converter 15V, 20W DC-DC converter 12V, 20W DC-DC converter Analog IC 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 18-Mbit QDR-II SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 20W DC-DC Converter(输出功率20WDC-DC转换
|
M.S. Kennedy Corp. M.S. Kennedy Corporation
|
M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMicroelectronics
|
M36P0R9070E0_06 M36P0R9070E0 M36P0R9070E0ZAC M36P0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999) 128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|